InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity

In this letter, high-performance InZnO/AlSnZnInO (IZO/ATZIO) bilayer thin-film transistors (TFTs) with an inverted staggered back channel etch structure are presented. The channel width and the length were both 6 μm, which is small enough to be adapted to a high-resolution display backplane. High field-effect mobility (μ
_FE
) over 60 cm
²
/Vs was obtained from the structure with 8-nm IZO channel insertion between the gate dielectric and the ATZIO layer. The device shows good controllability in light of TFT operation. The subthreshold slope, turn-ON voltage (V
_ON
), and ON/OFF ratio were 0.16 V/decade, -1.52 V, and 5×10
⁹
, respectively.