Improving the high-speed response of the GaAs metal-semiconductor-metal photodetector

The main purpose of this paper is to show the effect of charge accumulation and screening of the electric field on the Schottky Metal-semiconductor-Metal detector response and efficiency, which result of non-uniform distribution carriers along the absorption depth, and along the line between electrodes. The MSM (PD) with an active surface of 3×3 μm
²
and electrode spacing of 0.2, 0.3, 0.5 and 1 μm has been integrated in the central strip of coplanar lines for microwave switching application. Several ways of improving the high-speed response of the MSM-PD are analyzed and discussed.