High order frequency mixing in field effect transistors and fractionnal Dyakonov-Shur resonances

THz electromagnetic radiation control has tremendous applications such as defense and security (see-through technologies [1]), chemical compound identification or telecommunication. The exponential decrease of efficiency of standard devices around the so-called THz gap has prevented the development of technologies making use of this spectrum for a long time. Only recently enough has such technologies been available. M.Dyakonov and M.Shur have long predicted that field effect transistors should achieve tunable THz detection either resonantly [2] or non resonantly [3]. Their prediction relied on perturbation theory. Using numerical tools enables us to go beyond their approximation and predict new phenomena. For instance, at high incoming intensities, the resonant spectrum is enriched adding sub-harmonic resonance peaks to it.