Strained silicon photonics: Recent advances

Silicon photonics is being considered as the future photonic platform, mainly for the development of low power consumption photonic circuits. In this vision, several research groups are exploring Pockels effect in strained silicon. In this presentation, we present recent developments on strained silicon photonics taking into account parasitic effects including plasma dispersion effect and fixed charge effect under an electric field. We experimentally demonstrate Pockels effect in silicon waveguides strained by a SiN overlayer deposited by PECVD as a function of the wavelength and the waveguide width. Recent results on high-speed measurements will also be presented to dissociate Pockels effect and plasma dispersion effect.