Effect of waveguide design on AlGalnAs/InP laser diode characteristics

1550nm-lasers based on MOCVD-grown heterostructures are investigated. It is determined, that additional barrier layers grown between waveguide and cladding layers block carrier leakage into the cladding layers but results in internal optical loss rise with drive current increase. It is demonstrated that incorporation of barrier layers allows attaining 92% internal quantum efficiency and 3.2W CW RT output optical power.