Laser-thyristors as a source of high-power laser pulses with a pulse width of 1–100 ns

A low-voltage laser-thyristor heterostructure based on AlGaAs/GaAs with InGaAs QW has been fabricated in order to have a compact source of high-power laser pulses at 900nm wavelength. It has been shown experimentally that the lightly-doped base thickness increase up to 4 μm allows increasing a blocking voltage maximal value up to 25 V. Maximal peak powers of 55 W and 8 W have been attained at laser pulse times of 100 ns and 10 ns respectively for experimental samples of laser-thyristors with a 200 μm stripe. Lasing aperture decrease down to 20 μm has allowed us to decrease a laser pulse width down to 1 ns at peak power below 1 W.