A novel one transistor resistance-gate nonvolatile memory

For the first time, we propose a one transistor resistance-gate nonvolatile memory (RG-NVM) which comprises a simple MIM structure on top of the transistor gate while readout is taken from the transistor V_th or I_d, similar to that of flash memory. A bilayer MIM is preferable for quality performance. The program/erase operation of the memory is made by the edge-tunneling between source/drain and the top gate. Results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path issues of conventional crossbar ReRAM.