Magnetoelectric device feasibility demonstration — Voltage control of exchange bias in perpendicular Cr2O3 Hall bar device

Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices [1]. Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr
₂
O
₃
(Fig. 1) [2]. In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr
₂
O
₃
/[Co/Pd]n.