“Aluminum free nitride laser diodes grown by plasma assisted MBE”

In this work we will make survey of different nitride based LDs designs - starting from conventional LDs with AlGaN claddings and GaN or InGaN waveguides, through LDs with GaN claddings, InGaN waveguides and AlGaN electron blocking layer (EBL) and finally we will demonstrate first aluminum free nitride LDs grown by PAMBE. For LDs without Al in the structure an increase of the LDs lifetime is expected as it was demonstrated for arsenide based LDs. In particular, the change of the material system from AlGaAs/GaAs to InGaAsP/GaAs increased the lifetime of LDs operating at 808 nm by few orders of magnitude. This change was solely attributed to elimination of, highly susceptible to oxidation, aluminum from the device structure.