Superconductor-ionic quantum memory devices

This work provides a novel concept for a voltage-programmable quantum memory with capability to tune superconducting qubits. Electric field-induced ion transport in Superconductor-Ionic hetero-structures programs the tunneling current and Hamiltonian [1]. This work develops a model of the field-effect in the superconducting state at resonance. We use the model to simulate designs of memory devices programmable with sub-50 milli-Volt and sub-nanosecond pulses while maintaining 1-10 year storage time [2]. Quantum Master Equation (QME) simulations [3] support tuning of the time dependent quantum coherence properties in these devices with a programmed Hamiltonian determined by unique ion energy levels. To obtain further insights, we construct Niobium/AlO
_x
/Ionic-HfO
_x
/AlO
_x
/Niobium devices and characterize the effects of key experimental parameters. The work provides device technology advances applicable to cryogenic computing and quantum information [4-6].