Novel hydroxy-phenyl phosphorus porphyrin self-assembled monolayers for conformal n-type doping in Finfets

A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on silicon is done using contact angle, FTIR, UV-Vis, etc. The doping is confirmed using SIMS and four-probe measurement (sheet resistance). MISCAP devices, pn junction diodes using the above technique are fabricated and characterized using capacitance-voltage (CV) and current-voltage (IV) measurements. SAM layer is utilized for doping in 3D fin like structures.