Elucidating PID Degradation Mechanisms and In Situ Dark I–V Monitoring for Modeling Degradation Rate in CdTe Thin-Film Modules

A progression of potential-induced degradation (PID) mechanisms is observed in CdTe modules, which are dependent on the stress level and moisture ingress. This includes shunting, junction degradation, and two different manifestations of series resistance. The dark
I–V
method for
in situ
characterization of
P
_max
based on superposition was adapted for the thin-film modules undergoing PID in view of the degradation mechanisms observed. An exponential model based on module temperature and relative humidity (RH) was fit to the PID rate for multiple stress levels in chamber tests and validated by predicting the observed degradation of the module type in the field.