Microstructure and electrical properties of Ga2O3 doping on ZnO varistor ceramics with different sintering temperature

The electrical properties of ZnO varistor ceramics prepared with different sintering temperature were researched. The grain size of samples was homogeneous at sintering temperature 1160°C. The largest nonlinearity coefficient and least grain resistance were 75 and 0.3 Ω respectively, at 1160°C. The leakage current was reduced with increasing sintering temperature. The voltage gradient E
1mA
410V/mm acquired was good to optimize the ultra-high voltage arrestor structure. The optimized sintering temperature is 1160°C for giving ZnO varistors recipe.