Extremely Low-Force Debonding of Thinned CMOS Substrate by Laser Release of a Temporary Bonding Material

Over the past few years, temporary bonding has spread together with the development of 3D stacked IC (SIC) technology. Maturity of the various processes has constantly improved. Early processes enabled first demonstration of circuit thinning and thin wafer debonding. Each material generation has brought a step function in the technology maturity, which is now reaching a level allowing first 3D-SIC production. To further answer the refraining elements preventing a more massive technology adoption, novel temporary bonding materials and processes are being developed to reach even lower stress and wafer breakage risks. Hence this contribution deals with the early demonstration of a novel laser release process for ultralow-force debonding.