Ultrahigh-performance poly-si thin film transistor using multi-line beam continuous-wave laser lateral crystallization

(100) surface oriented poly-Si film on glass substrate has been a key requirement to realize high performance low temperature poly-Si thin film transistors (LTPS-TFTs). Using multi-line beam (MLB) continuous-wave laser lateral crystallization (CLC) with overlapping, (100)-dominantly oriented poly-Si film was realized with average grain size of approximately 20 μm × 2 μm in normal surface direction. Ultrahigh-performance LTPS-TFTs were achieved with a very high electron field effect mobility of μFE = 940 cm
²
/Vs, a high ON/OFF ratio of 10
⁵
, threshold voltage of 0 V, and subthreshold slope of 0.12 V/dec. This approach is nearly comparable to single crystal Si transistor.