Blue GaN based LED fabrication using hybrid process of the minimal photolithography system and MOCVD

Minimal photolithography system has been developed for pattering process without photomask fabrication. The minimal mask-less exposure system utilize Digital Light Processing (DLP) and LED NUV light source (wavelength 405nm). We have proved the fabrication of blue LED with hybrid process which has used to minimal mask-less exposure system and 2inch LED fabrication consisting of gallium-nitride (GaN) metal organic chemical vapor deposition (MOCVD), metal evaporation systems. The luminescence property of the half-inch LED is comparable to 2inch one regarding emission intensity and emission wavelength at electroluminescence (EL). In addition, the contact resistivity of the half-inch LED indicates the same level of 2inch performance. The mask-less exposure system can save photomask preparation time and cost for p-electrode patterning, mesa pattering and metal electrode including TEG pattern. The fabrication cycle time and cost extremely can reduce.