Measured linearity improvement of 10 W GaN HEMT PA with dynamic gate biasing technique for flat transfer phase

In this work we present linearity improvement of a 10 W GaN HEMT PA using a dynamic gate biasing technique for flattening a transfer phase of the PA according to the instantaneous input power. A dynamic Vgs calculation was based on a one-tone power sweep measurement with a static bias. Results are showing 5.6-7.7 dB better ACPR and 4.2-4.9 percentage points better EVM compared to the reference static bias PA with a same average Pout. Furthermore, 1.7-2.7 dB higher output power with 1.3-8.5 percentage points higher PAE has been achieved compared to the reference static bias with ACPR better than 40 dBc. Moreover, it has been shown that the static measurement of this GaN PA can be used for a good prediction of the PA behavior under dynamic operation.