Q-Band InAlGaN/GaN LNA using current reuse topology

A 33 to 41-GHz Low Noise Amplifier (LNA) with a 3-dB Noise Figure (NF) using 0.12-μm InAlGaN/GaN HEMT was developed. The LNA consists of a two-stage common-gate amplifier with current reuse topology in order to obtain a high gain with low power consumption. The developed LNA achieved 15-dB gain, and an input return loss of less than -10 dB. The measured NF was 3 dB, and the power consumption was 280 mW. The measured OIP3 and OP1dB were 24 dBm and 13 dBm at 38 GHz under a supply voltage of 20 V. The chip size of the LNA is 1 × 0.7 mm
²
.