Hybrid silicon plasmonic ring resonator modulator

We propose a hybrid plasmonic modulator based on the ring resonator configuration. The device structure is composed of a stack of layers of silicon-insulator-metal-insulator-silicon, all on a buried oxide. The insulator embedded in the structure is an organic polymer with strong electro-optical effects. The proposed device is characterized by its small footprint, high extinction ratio, and moderate insertion losses. 3D Finite Difference Time Domain simulations tools were employed for designing and simulating the operation of the modulator at the telecommunication wavelength, while observing the device performance.