Effect of plasma density enhancement during plasma ion implantation

Summary form only given. Plasma density enhancement is frequently observed during plasma ion implantation processes
¹
. It can most clearly be measured using an optically isolated Faraday cup with secondary electron suppression. It manifests itself a significantly increased current density to the target, which persists after the transient high current pulse to the target has decayed. The enhanced plasma density presents issues for accurate dosimetry in plasma ion implantation processes. While it can be modeled using an empirically determined density enhancement factor
²
, a first-principles approach would be preferable. This paper discusses the mechanisms leading to plasma density enhancement, their modeling in the context of plasma ion implantation processes, and their implications for accurate dosimetry in plasma ion implantation applied to semiconductor processing and other applications.