Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD

We investigated the temperature dependence of dark current, avalanche gain and breakdown voltage in Al
_0.85
Ga
_0.15
As
_0.56
Sb
_0.44
(hereafter AlGaAsSb) avalanche photodiodes (APDs) with avalanche region widths, w = 90 and 178 nm. There is negligible band to band tunnelling currents and a very weak temperature dependence of gain observed in both didoes. The temperature coefficient of breakdown voltage, C
_bd
= 0.41 mV/K in AlGaAsSb diode with w = 90 nm is the lowest value reported for different semiconductor materials with similar avalanche region width.