InP on SOI electrically driven photonic crystal nanolasers

Summary form only given. Electrically driven CW operation of energy-efficient ultra-compact InP-based nanolasers in a Silicon photonic platform is demonstrated. The nanolaser diode is single mode and emits at 1560 nm with SMSR grater than 20dB. The threshold is low, around 0.1mA at 1 V and the emitted power in the SOI waveguide is of the order of 0.1mW giving a wall-plug efficiency higher than 10 percents.