Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency

Summary form only given. Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE growth techniques to produce GaN tunnel junction devices with a total device series resistance as low as 1.5 × 10
^-4
Ω cm
²
. III-Nitride edge emitting lasers and VCSELs were fabricated and will be discussed. In addition, a regrowth technique for growing tunnel junctions on commercial c-plane wafers has been developed and LEDs with an EQE of 78% and wall plug efficiency (WPE) of 72% have been fabricated using this technique.