G-Band MMIC resonant tunneling diode oscillators

This paper presents a G-band (140 -220 GHz) monolithic microwave/ (millimeter-wave) integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator operating at 205.8 GHz with -14.6 dBm output power. The circuit topology employs two InGaAs/AlAs RTDs in parallel. A new RTD epi-layer material design which will greatly benefit micrometer-sized RTD devices for high output power of millimeterwave oscillators is also presented. It is expected that the oscillator output power will reach several mW for RTD oscillators operating in the G-band. This work shows the promising potential of RTD oscillators as terahertz (THz) sources for a variety of applications including high speed wireless communication.