SnO2 thin films grown on m-plane sapphire substrate by mist chemical vapor deposition

Tin dioxide (SnO
₂
) thin films, as a candidate for realizing next-generation power and optical devices, were grown on 2-inch diameter m-plane sapphire substrates by mist chemical vapor deposition at atmospheric pressure. The SnO
₂
thin films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) in θ-2θ and ø scanning modes, and electron backscatter diffraction (EBSD). Although the SEM images showed the rough surface morphology, it was found from the XRD and EBSD measurements that SnO
₂
films were epitaxially grown on the substrates under optimised growth condition. The XRD and EBSD results confirm epitaxial SnO
₂
thin film growth at three typical areas on the substrate. It is likely that the single crystalline SnO
₂
(001) thin film was formed across the 2-inch sapphire substrate.