Impact of film thickness on crystalline and magnetic properties in Mn-doped ZnSnAs2 thin films

We investigated the effect of film thickness on structural and magnetic properties of ZnSnAs
₂
:Mn thin films. Samples with 80, 170 and 250 nm values of thickness were epitaxially grown on semi-insulating InP(001) substrates, followed by ZnSnAs
₂
buffer layers using molecular beam epitaxy (MBE). The lattice constants and crystal structures were determined by X-ray diffraction (XRD). The reciprocal lattice mapping revealed that the 80-nm-thick sample could be completely lattice-matched with InP (001) substrates. Ferromagnetic hysteresis was clearly observed at 300 K for the 170 nm and 250 nm samples.