Shubnikov-de Haas Oscillations observed in high-mobility monolayer graphene encapsulated by h-BN

Sumamry form only given. Clear Shubnikov-de Haas Oscillations have been observed in a high-mobility monolayer graphene sandwiched between two sheets of h-BN. The maximum mobilities of the p- and n-type carriers are 1.2 × 10
⁵
cm
²
/Vs and 1.1 × 10
⁵
cm
²
/Vs at 0.3 K, respectively. The typical effective mass can be estimated as 0.030 and 0.031 in p-type and n-type regions, respectively. The effective mass and the lifetime as a function of the carrier concentration will also be discussed and compared to the values observed in a conventional low-mobility sample using a SiO
₂
layer.