Selective Doping in InAs/GaAs quantum dot solar cells: Effect on photoluminescence and photovoltaic performance

Summary form only given. We present an extensive study of the influence of selective doping on the behavior of quantum dot solar cells, considering both modulation and direct doping approaches. A combined analysis of photoluminescence and photovoltaic behavior at short-circuit and open circuit condition, encompassing different hypothesis in terms of crystal quality of the interdot layers, allows clarifying how doping affects quantum dots capture and radiative recombination on the one hand, and non-radiative recombination on the other hand. The detrimental effect of p-type doping is explained in view of the asymmetric hole and electron dynamics in the quantum dot states. Remarkable open circuit voltage recovery is predicted for n-type doped cells, thanks to the concomitant suppression of non-radiative and radiative loss channels. Simulation results suggests that the competition of different recombination mechanisms will show up as a non-linear dependence of photoluminescence intensity on excitation power density.