Photovoltaic properties of perovskite-type solar cells with polysilane-doped hole transport layers

Photovoltaic properties of perovskite-type solar cells with polysilane-doped hole transport layers were investigated. Poly(methyl phenylsilane), dimethyl-polysilane and decaphenylcyclopentasilane were doped into 2,2',7,7'-tetrakis-(N,N-di-pmethoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) solutions. Conversion efficiencies of the TiO
₂
/CH
₃
NH
₃
PbI
₃
/polysilane-doped spiro-OMeTAD photovoltaic cells were improved compared to that of a conventional TiO
₂
/CH
₃
NH
₃
PbI
₃
/spiro-OMeTAD photovoltaic cell. The highest conversion efficiency was obtained for a TiO
₂
/CH
₃
NH
₃
PbI
₃
/decaphenylpentasilane-doped spiro-OMeTAD photovoltaic cell, indicating that polysilanes are useful dopant to improve the conversion efficiencies.