Selective area grown AlGaInAs multi-quantum wells characterization and modeling for photonic integrated devices

The use of industrial micro x-ray diffraction (μ-XRD) allows us to access composition and thickness of multiple quantum well (MQW) made by selective area growth (SAG). To make high performance photonic integrated circuit (PIC), a precise design of dielectric masks is mandatory for the SAG process. μ-XRD measurements point out some unpredicted behavior compared to our previous modeling like indium enrichment. Thus a new model is now developed, based on the Kardar-Parisi-Zhang (KPZ) equation which takes into account other phenomena occurring during SAG, like surface migration and relaxation patterns.