Electrical characteristic of n-InP/ i-GaInAs/ p-InP core-multishell NWs grown by self-catalytic VLS mode

The core-multishell nanowires of n-InP/ i-GaInAs/ p-InP were successfully grown on an InP(111)B substrate by low-pressure metal organic vapor phase epitaxy (MOVPE) using an indium self-catalyst. The self-catalytic vapor-liquid-solid (VLS) mode was used to obtain high-quality nanowires in which a deposited indium droplet acts as the catalyst instead of a metal particle, as in the case of the conventional VLS mode. An n-InP core nanowires were grown by VLS mode, and GaInAs/ InP shells were grown by VPE mode, by supplying trimethylindium (TMI), tertiarybutylphosphine (TBP), triethylgallium (TEG), and tertiarybutylarsenic (TBAs), respectively, and their dopant were ditiarybutylsilicon (DTBSi) and diethylzinc (DEZn). Spin-on-glass and patterned electrodes were formed, and voltage-current characteristics of n-InP/ i-GaInAs/ p-InP core-multishell nanowires have shown typical rectifying characteristics of p-i-n diode, and the ideality factor of this sample was n=3.2.