Versatile resistive switching in niobium oxide

Resistive switching devices have a high potential for nonvolatile memories and circuit applications. This paper gives a review of the different switching modes in niobium oxide. Abrupt memory switching, threshold switching with or without memory switching and analog switching can be obtained by controlling the stoichiometry of the layer stack either with the use of reactive electrodes, by reactive sputtering with different argon to oxygen ratios or by ion implantation.