Built-in selectors self-assembled into memristors

We demonstrate an approach to build a selector into ReRAM (memristors) using engineered materials. In this approach, a segment(s) of “nonlinear material” is self-assembled into the conduction channel (s) (filament) of a memristor. The nonlinear material exhibits a highly nonlinear current-voltage characteristic, which gives rise to a nonlinear i-v characteristic of the memristor in the ON state.