Investigation of Post Oxidation Annealing Effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

This paper investigates the Al
₂
O
₃
/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400°C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al
₂
O
₃
/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.