Gallium phosphide nanowires for optoelectronic devices

Gallium phosphide nanowires (GaP-NWs) were synthesized via oxide assisted growth mechanism in a chemical vapor deposition (CVD) and their optoelectronic properties were studied. The diameters of nanowires were in the range of 20-80 nm and lengths extended up to tens of micrometers. Raman spectra studies of GaP-NWs reveal broad and intense peaks at 364 and 398 cm-1 confirmed from transverse optic (TO) and longitudinal optics (LO) phonon. High resolution (HR) X-ray diffraction (XRD) reveals an addition peak that indicates presence of silicon in chemical network of GaP-NWs. Photoluminescence spectra shows intense PL peaks, indicating their potential applications in optoelectronic devices.