Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns

This paper describes breakdown characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with multi-finger gate patterns. We studied the spatial profile of electroluminescence (EL) from AlGaN/GaN HEMTs under high drain and near pinch-off gate bias. As a result, different EL emission profiles and breakdown characteristics were observed depending on the drain electrode pattern of the devices.