High voltage 4H-SiC Bi-directional IGBTs

We experimentally demonstrate, for the first time, bi-directional 4H-SiC planar gate, insulated gate bipolar transistors fabricated on 250-μm thick, lightly doped freestanding substrates. On Si face, forward voltage drop (at 50 A/cm
²
) of 9.7 V was obtained at room temperature, with a differential on-resistance of 140 mΩ·cm
²
, indicating good conductivity modulation. We have also demonstrated control over minority carrier injection by using a backgate bias, which can be used to drastically reduce switching losses.