0.13 μm modular BCD technology enable to embedding high density E2PROM, RF and hall sensor suitable for IoT application

In this paper, we develop 0.13 μm BCD technology which gives best-in-class LDMOS transistors rated up to 30V with ultra-low leakage logic device. Based on this process, high density EEPROM with the cell size of 0.645 μm
²
and RF devices such as varactor and inductor are integrated. Also, high reliable Hall sensor family can be added. Total Photo mask layers are only 33 for 5 metallization.