UIS withstanding capability and mechanism of high voltage GaN-HEMTs

This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate voltage at off-state and the substrate connection. The relation between the UIS withstanding capability and the electrical potential at gate and substrate is discussed by the results of the UIS test for GaN-HEMTs with p-type gate structure. Conclusively, the mechanism of UIS for the GaN-HEMT was clarified.