Simulation and experimental results of 3.3kV cross switch “Si-IGBT and SiC-MOSFET” hybrid

In this work we present the simulation and experimental results of the “Cross Switch (XS)-Hybrid” built with 3.3kV Si-IGBTs and SiC-MOSFETs. We have analyzed the switching performance, mainly the turn-off behavior of the XS-Hybrid (a parallel arrangement of a Si-IGBT and a SiC-MOSFET) with the aid of Sentaurus TCAD device simulations. We discuss in detail the current sharing mechanism between these two devices and hence the distribution of the turn-off losses and the stress (peak power density, dynamic avalanche) on the devices during switching. In addition, we have investigated the turn-off behavior of the XS-Hybrid by variation of the area ratio between the Si-IGBT and SiC-MOSFET, variation of the gate resistance, and variation of the gate resistance ratio. To investigate the switching behavior of the XS-Hybrid, first the simulation models have been adjusted to match the experimental results of the 3.3kV Si-IGBT and SiC-MOSFET. Furthermore, the simulation and experimental results of the 3.3kV XS-Hybrid are compared with the full 3.3kV Si-IGBT and full 3.3kV SiC-MOSFET reference devices.