Demonstration of an enhanced trench Bimode Insulated Gate Transistor ET-BIGT

In this paper, a 3300V Bimode Insulated Gate Transistor BIGT chip utilizing an Enhanced Trench MOS cell is demonstrated. The paper provides an insight into the ET-BIGT device design along with the static and dynamic electrical results obtained from the first manufactured prototypes. The combined advantages of a low loss Enhanced Trench cell concept and BIGT chip integration sets a new milestone for delivering higher output power for the next generation BIGT power modules.