AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

This work reports on Au-free AlGaN/GaN lateral Schottky diodes on 200 mm Si substrate, with both optimized DC and dynamic characteristics and anode width ranging from 100 μm until 100 mm. 100 mm-wide diodes show low leakage (within 1 μA/mm at anode-cathode voltage Vac = -200V) and low on-state voltage (i.e., Vac at 100 mA/mm forward current) within 1.35 V. Reduced current collapse is achieved by in-situ N2 plasma clean in combination with an in-situ SI
₃
N4 capping layer.