2004-nm Ridge-Waveguide Distributed Feedback Lasers With InGaAs Multi-Quantum Wells

Fabrication and characteristics of 2004-nm wavelength InP-based ridge-waveguide distributed feedback lasers with InGaAs multi-quantum wells are described. By means of a relatively simple fabrication process, the device can operate stably in a single mode without any mode hopping. A high side-mode suppression ratio of 49 dB is achieved. The emission wavelength can be finely controlled from 2000 to 2008 nm with a current-tuning rate of 0.0047 nm/mA and a temperature-tuning rate of 0.127 nm/K. In addition, the influence of facet coating conditions on the single-mode property of these distributed feedback lasers was investigated.