Analysis of series SiC MOSFETs stack using a single standard gate driver

An overview of existing MOSFET series topologies with single gate driver is given and a newly-designed topology using two SiC MOSFET is proposed in this paper. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation in the last part validate the analysis and show the availability of the SiC MOSFET series topology using single gate driver.