Contacts for monolithic 3D architecture: Study of Ni0.9Co0.1 silicide formation

In this work, we studied the solid-state reaction between a Ni
_0.9
Co
_0.1
film and a silicon substrate. NiCo silicide is considered to substitute Ni- and NiPt-based silicides in 3D integration in order to extend the bottom transistor thermal stability. Thanks to the combined analysis of sheet resistance data, X-ray reflectivity spectra modelling, X-ray diffraction and wavelength dispersive X-ray fluorescence analyses on Ni
_0.9
Co
_0.1
/Si samples annealed at various temperatures, we were able to describe the phase sequence of the NiCo silicide formation.