SiGe HBT large-signal modelling and its application to the design of millimetre wave amplifiers

In this paper, different topologies for linear and nonlinear SiGe HBT modelling are presented. The parameters are extracted from DC and S-parameters measurements. Good fitting is obtained in DC and scattering curves up to 50 GHz for different devices. A preliminary linear amplifier at 38 GHz, using SiGe HBT technology from Daimler-Benz research centre (Ulm, Germany), has been designed.