A column-base InP lateral bipolar transistor

An InP lateral bipolar transistor has been successfully fabricated on a semi-insulating substrate by implanting Si/sup +/ as the emitter and collector contacts and Mg/sup +/ as the column base. An array of 33 1- mu m-diameter columns with 1- mu m separation between each was formed between the emitter-collector spacing of 3 mu m. A current gain of 290 was obtained at 77 K; it was over 12 at room temperature.<
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