Experimental Demonstration of a Solid-StateDamping Resistor for HVDC Applications

Significant drivers for Silicon Carbide based semiconductor devices focus on the areas of increased power density, voltage and thermal rating. Combination of high breakdown field, good thermal conductivity and high power densities of SiC opens opportunities for innovative device concepts. This work presents the experimental investigations undertaken to characterise the performance of 3.3 kV SiC-based Solid State Damping Resistor installed within a High Voltage Direct Current Line Commutated Converter Valve as a replacement for the passive damping resistor in a valve auxiliary circuit.