800V Super Junction MOSFET (HV-DTMOS IV) with better trade-off between switching loss and dVDS/dt

A new generation 800V-class MOSFET, HV-DTMOS IV, is developed using super junction (SJ) technology. The proposed device shows high speed and low loss switching characteristics. By optimizing the drift region and MOS structure, the specific on-state resistance RDS(on)*A and the switching F.O.M. RDS(on)*QG could be reduced by 27% and 69% respectively compared to the competitor. The trade-off between switching loss and the drain-source voltage change rate (dVDS/dt) could also show better results compared to a competitor's SJ-MOSFET.