Compact, Low Loss and High Reliable 3.3kV Hybrid Power Module

Power electronics products are required to be small size, light weight, and high efficiency. To meet these trends, we developed 3.3kV hybrid power module with silicon carbide schottky barrier diode (SiC-SBD) and silicon insulated gate bipolar transistor (Si-IGBT). The total loss of the developed hybrid power modules are significantly reduced by applying SiC-SBD compared to conventional Si power modules. In addition, applying high-strength Sn-Sb solder improve high temperature reliability of the developed hybrid power modules and their operation temperature from 125 degree C to 150 degree C. With these technologies, 30% downsizing and light weight of power module are realized. In addition, the total loss is reduced by 21 % at a carrier frequency of 1 kHz.